FQD2N100TM Fairchild Semiconductor Fairchild FQD2N100TM N-channel MOSFET Transistor, 1.6 A, 1000 V, 3-pin D-PAK
Description
Fairchild FQD2N100TM N-channel MOSFET Transistor, 1.6 A, 1000 V, 3-pin D-PAK
Producer
Fairchild Semiconductor
The product with part number FQD2N100TM (Fairchild FQD2N100TM N-channel MOSFET Transistor, 1.6 A, 1000 V, 3-pin D-PAK)
is from company Fairchild Semiconductor and distributed with basic unit price 1,10 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.6 x 6.1 x 2.3mm Height2.3mm Length6.6mm Maximum Continuous Drain Current1.6 A Maximum Drain Source Resistance9 Ω Maximum Drain Source Voltage1000 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation2.5 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeDPAK Pin Count3 Typical Gate Charge @ Vgs12 nC V @ 10 Typical Input Capacitance @ Vds400 pF V @ 25 Typical Turn-Off Delay Time25 ns Typical Turn-On Delay Time13 ns Width6.1mm Product Details QFET® N-Channel MOSFET, up to 5A, Fairchild Semiconductor Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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