FDFME2P823ZT Fairchild Semiconductor Fairchild FDFME2P823ZT P-channel MOSFET Transistor, 6-pin MicroFET
Description
Fairchild FDFME2P823ZT P-channel MOSFET Transistor, 6-pin MicroFET
Producer
Fairchild Semiconductor
The product with part number FDFME2P823ZT (Fairchild FDFME2P823ZT P-channel MOSFET Transistor, 6-pin MicroFET)
is from company Fairchild Semiconductor and distributed with basic unit price 0,55 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeP Dimensions1.6 x 1.6 x 0.55mm Height0.55mm Length1.6mm Maximum Continuous Drain Current-2.6 A Maximum Drain Source Resistance530 mΩ Maximum Drain Source Voltage-20 V Maximum Gate Source Voltage±8 V Maximum Operating Temperature+150 °C Maximum Power Dissipation1.4 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeMicroFET Pin Count6 Typical Gate Charge @ Vgs5.5 nC V @ -10 Typical Input Capacitance @ Vds305 pF V @ -10 Typical Turn-Off Delay Time33 ns Typical Turn-On Delay Time4.7 ns Width1.6mm Product Details P-Channel PowerTrench® MOSFET with Schottky Diode, Fairchild Semiconductor Designed for battery charge switches in cellular handset and other ultra-portable applicationsAn independently connected low forward voltage schottky diode allows for minimum conduction losses MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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