FGA30N120FTDTU Fairchild Semiconductor Fairchild FGA30N120FTDTU N-channel IGBT Transistor, 60 A 1200 V, 3-Pin TO-3PN
Part Nnumber
FGA30N120FTDTU
Description
Fairchild FGA30N120FTDTU N-channel IGBT Transistor, 60 A 1200 V, 3-Pin TO-3PN
Producer
Fairchild Semiconductor
The product with part number FGA30N120FTDTU (Fairchild FGA30N120FTDTU N-channel IGBT Transistor, 60 A 1200 V, 3-Pin TO-3PN)
is from company Fairchild Semiconductor and distributed with basic unit price 4,88 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions15.8 x 5 x 20.1mm Height20.1mm Length15.8mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current60 A Maximum Gate Emitter Voltage±25V Maximum Operating Temperature+150 °C Maximum Power Dissipation339 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-3PN Pin Count3 Width5mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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