FGAF40N60UFDTU Fairchild Semiconductor Fairchild FGAF40N60UFDTU N-channel IGBT Transistor, 40 A 600 V, 3-Pin TO-3PF
Part Nnumber
FGAF40N60UFDTU
Description
Fairchild FGAF40N60UFDTU N-channel IGBT Transistor, 40 A 600 V, 3-Pin TO-3PF
Producer
Fairchild Semiconductor
The product with part number FGAF40N60UFDTU (Fairchild FGAF40N60UFDTU N-channel IGBT Transistor, 40 A 600 V, 3-Pin TO-3PF)
is from company Fairchild Semiconductor and distributed with basic unit price 2,48 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions15.5 x 5.5 x 26.5mm Height26.5mm Length15.5mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current40 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation100 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-3PF Pin Count3 Width5.5mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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