FGD4536TM Fairchild Semiconductor Fairchild FGD4536TM N-channel IGBT Transistor, 220 A 360 V, 1MHz, 3-Pin DPAK, TO-252
Description
Fairchild FGD4536TM N-channel IGBT Transistor, 220 A 360 V, 1MHz, 3-Pin DPAK, TO-252
Producer
Fairchild Semiconductor
The product with part number FGD4536TM (Fairchild FGD4536TM N-channel IGBT Transistor, 220 A 360 V, 1MHz, 3-Pin DPAK, TO-252)
is from company Fairchild Semiconductor and distributed with basic unit price 0,81 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions6.73 x 6.22 x 2.39mm Height2.39mm Length6.73mm Maximum Collector Emitter Voltage360 V Maximum Continuous Collector Current220 A Maximum Gate Emitter Voltage±30V Maximum Operating Temperature+150 °C Maximum Power Dissipation125 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeDPAK, TO-252 Pin Count3 Switching Speed1MHz Width6.22mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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