FGPF15N60UNDF Fairchild Semiconductor Fairchild FGPF15N60UNDF N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220F

Part Nnumber
FGPF15N60UNDF
Description
Fairchild FGPF15N60UNDF N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220F
Producer
Fairchild Semiconductor
Basic price
2,52 EUR

The product with part number FGPF15N60UNDF (Fairchild FGPF15N60UNDF N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220F) is from company Fairchild Semiconductor and distributed with basic unit price 2,52 EUR. Minimal order quantity is 1 pc.


Channel TypeN ConfigurationSingle Dimensions10.36 x 2.74 x 16.07mm Height16.07mm Length10.36mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current30 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation42 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-220F Pin Count3 Switching Speed1MHz Width2.74mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


Following Parts

Random Products

(keyword FGPF15N60UNDF Fairchild Semiconductor Fairchild FGPF15N60UNDF N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220F)
© 2015 Industry Server