RFD3055LESM9A Fairchild Semiconductor Fairchild RFD3055LESM9A N-channel MOSFET Transistor, 3-pin TO-252 AA
Part Nnumber
RFD3055LESM9A
Description
Fairchild RFD3055LESM9A N-channel MOSFET Transistor, 3-pin TO-252 AA
Producer
Fairchild Semiconductor
The product with part number RFD3055LESM9A (Fairchild RFD3055LESM9A N-channel MOSFET Transistor, 3-pin TO-252 AA)
is from company Fairchild Semiconductor and distributed with basic unit price 0,68 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.73 x 6.22 x 2.39mm Height2.39mm Length6.73mm Maximum Continuous Drain Current11 A Maximum Drain Source Resistance0.107 Ω Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±16 V Maximum Operating Temperature175 °C Maximum Power Dissipation38 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-252 AA Pin Count3 Typical Gate Charge @ Vgs9.4 nC@ 10 V Typical Input Capacitance @ Vds350 pF@ 25 V Typical Turn-Off Delay Time22 ns Typical Turn-On Delay Time8 ns Width6.22mm Product Details Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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