HGTG10N120BND Fairchild Semiconductor IGBT Transistors 35A 1200V N-Ch

Part Nnumber
HGTG10N120BND
Description
IGBT Transistors 35A 1200V N-Ch
Producer
Fairchild Semiconductor
Basic price
4,36 EUR

The product with part number HGTG10N120BND (IGBT Transistors 35A 1200V N-Ch) is from company Fairchild Semiconductor and distributed with basic unit price 4,36 EUR. Minimal order quantity is 1 pc, Approx. production time is 8 weeks, Weight is 0.0064 Kg.


Fairchild Semiconductor Product Category: IGBT Transistors RoHS:  Details Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 17 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 298 W Maximum Operating Temperature: + 150 C Package/Case: TO-247-3 Packaging: Tube Brand: Fairchild Semiconductor Continuous Collector Current Ic Max: 35 A Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Series: HGTG10N120 Factory Pack Quantity: 150 Part # Aliases: HGTG10N120BND_NL


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